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 General Information
Direct RDRAMTM
Direct RDRAM Product Guide
Version 1.9 June 2009
General Information
A. Direct RDRAM Component Product Guide
Change History
Version 1.0 (Mar. 03)
First Copy
Direct RDRAMTM
Version 1.1 (May 03)
Add 576Mb base RIMM Module
Version 1.2 (July 03)
Add 128Mb F-die , Add 576Mb base 32bit RIMM Module
Version 1.3 (Oct 03)
Add 256Mb E-die , Add 576Mb base SO-RIMM & NexMod Module
Version 1.4 (Jan. 04)
Add 288Mb E-die , Add 288Mb E-die base Modules
Version 1.5 (May. 04)
Change the availability of 288Mb D-die/E-die base Modules, etc.
Version 1.6 (Sep. 05)
Add 128Mb H-die , Change the availability of 576Mb A-die & A-die base Modules
Version 1.7 (Mar. 06)
Delete 128Mb E-die, 256/288Mb D-die, 256Mb E-die, etc.
Version 1.8 (Aug. 06)
Add 288Mb I-die, Delete 16bit RIMM based 576Mb A-die, 32bit RIMM, 32d RIMM, SO-RIMM based 576Mb A-die, NexMod based 576Mb A-die
Version 1.9 (Jun. 09)
Delete 128Mb F-die, 128Mb H-die, 256Mb E-die, 288Mb E-die, 576Mb A-die Delete all of RDRAM module line-up
General Information
A. Direct RDRAM Component Product Guide
Density 288Mb(I-die) Org.*1 512Kx18*32s Part Number K4R881869I-DC Speed*3 T9 Power(V) Refresh
Direct RDRAMTM
Package Type*2 92ball FBGA
Availability Now
2.50.13V 16K/32ms
*1
Bank description - 32s :32 banks with a "spilt" architecture
*3
Speed (Freq. & tRAC)
Application Code N1 T9 N9 M9 Short channel 800Mbps Long channel Short channel S9 M8 K8 S8 Description (tCYCLE. tRAC, tRC) 600MHz(1.667ns), -32, 32clks 533MHz (1.875ns), -32P, 28clks 533MHz (1.875ns), -32, 28clks 533MHz (1.875ns), -35, 32clks 533MHz (1.875ns), -35, 32clks 400MHz (2.5ns), -40, 28clks 400MHz (2.5ns), -45, 28clks 400MHz (2.5ns), -45, 28clks
*2
Package Type
Description WBGA WBGA, Lead free WBGA, Lead free for SO-RIMM module 54ball WBGA, Lead free 54ball WBGA FBGA, Lead free F G H T R D
Data frequency
Code
1200Mbps Long channel Long channel
1066Mbps
General Information
B. Direct RDRAM Component Ordering Information
1 2 3 4 5 6 7 8 9 10
Direct RDRAMTM
11
K4 RXXXXXXX-XXXX
SAMSUNG Memory DRAM Product Density & Refresh Organization Speed Temperature & Power Package Type Revision Interface (VDD, VDDQ) Bank
1. SAMSUNG Memory : K 2. DRAM : 4 3. Product R : RDRAM 4. Density & Refresh 27 : 44 : 57 : 88 : 52 : 76 : 128M, 144M, 256M, 288M, 512M, 576M, 16K/32ms(1.95us) 16K/32ms(1.95us) 16K/32ms(1.95us) 16K/32ms(1.95us) 32K/32ms(0.98us) 32K/32ms(0.98us)
9. Package Type M N S F G H T R D :* uBGA" package for Mirrored Package :* uBGA" package for Normal Package :* uBGA" package for Consumer Package : WBGA : WBGA lead free : WBGA lead free for SO-RIMM Module : Consumer WBGA(54ball) & Lead free : Consumer WBGA(54ball) : FBGA & Lead free
10. Temperature & Power C : Commercial, Normal L : Commercial, Low I : Industrial, Normal
5. Organization 16 : x16 18 : x18 6. Bank 6 : 32 Banks 7. Interface ( VDD, VDDQ) 9 : RSL (2.5V) 8. Revision M : 1st Gen. A : 2nd Gen. B : 3rd Gen. C : 4th Gen. D : 5th Gen. E : 6th Gen. F : 7th Gen. H : 9th Gen. I : 10th Gen.
11. Speed (tCYCLE. tRAC, tRC) DS N1 T9 N9 M9 S9 : for Daisy chain Sample : 600MHz (1.667 ns), - 32, 32clks, for Long channel : 533MHz (1.875 ns), - 32P, 28clks, for Long channel : 533MHz (1.875 ns), - 32, 28clks, for Long channel : 533MHz (1.875 ns), - 35, 32clks, for Long channel : 533MHz (1.875 ns), - 35, 32clks, for Short channel 28clks, for Long channel 28clks, for Long channel 28clks, for Short channel
M8 : 400MHz (2.5 ns), - 40, K8 : 400MHz (2.5 ns), - 45, S8 : 400MHz (2.5 ns), - 45,
K7 : 356MHz (2.81 ns), - 45, 28clks, for Long channel G6 : 300MHz (3.33 ns), - 53.3, 28clks, for Long channel S6 : 300MHz (3.33 ns), - 53.3, 28clks, for Short channel
* uBGA and micro BGA are registered trademarks of Tessera, Inc.


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